| PART |
Description |
Maker |
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| DMN3008SFG-13 |
Qualified to AEC-Q101 Standards for High Reliability
|
Diodes Incorporated
|
| MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| IXDA20N120AS |
IGBT Discretes: NPT IGBT
High Voltage IGBT
|
IXYS
|
| SGL160N60UFD SGL160N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 160 A, 600 V, N-CHANNEL IGBT, TO-264AA
Ultrafast IGBT
Discrete, High Performance IGBT with Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
Low V High speed IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MPQ4423GQ |
High Efficiency 3A, 36V, Synchronous Step Down Converter AEC-Q100 Qualified
|
Monolithic Power System...
|
| MPQ20051-AEC1 |
Low Noise, High PSRR, 1A Linear Regulator AEC-Q100 Qualified
|
Monolithic Power System...
|
| JANTX2N4399 JAN2N4399 |
PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/433
|
Microsemi Corporation
|
| MIL4922-23L MIL4922-01L MIL4922-02L MIL4922-03L MI |
High Current, MIL-PRF-27/367 Qualified Surface Mount Power Inductors
|
API Delevan
|
| MPQ4470AGL MPQ4470GL MPQ4470GL-AEC1 |
High-Efficiency, Fast-Transient, 5A, 36V Synchronous, Step-Down Converter AEC-Q100 Qualified
|
Monolithic Power Systems
|
